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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3646/D Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3646 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous -- 10 ms Pulse Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector - Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES -- -- 0.5 3.0 40 15 40 5.0 -- -- -- -- Vdc Vdc Vdc Vdc mAdc v 300 ms; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) hFE 30 25 15 -- -- -- -- 0.73 -- -- 120 -- -- 0.2 0.28 0.5 0.3 0.95 1.2 1.7 -- Collector - Emitter Saturation Voltage VCE(sat) Vdc Base - Emitter Saturation Voltage VBE(sat) Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 350 -- -- -- 5.0 9.0 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Fall Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) (Figure 1) (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) (Figure 1) ton td tr toff tf ts -- -- -- -- -- -- 18 10 15 28 15 18 ns ns ns ns ns ns Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Figure 1. Switching Time Equivalent Test Circuit Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS RC CS(max) VBE(off) pF 4 4 12 V -1.5 -- -2.0 V1 V -- V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns 330 270 0 560 960 560 96 10.55 -4.15 10.70 -4.65 6.55 6.35 -4.65 6.55 V3 0 V2 PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125C 25C 30 20 -15C - 55C MPS3646 VCE = 1 V 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 200 TJ = 125C h FE, DC CURRENT GAIN 100 70 50 25C -15C - 55C MPS3646 VCE = 1 V 30 20 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 2. Minimum Current Gain 270 t1 +10 V V 0 <1 ns 9.2 k PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% 3V 8 pF CS < 4 pF C COPT TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector-base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE Figure 4. Turn-Off Waveform If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn-off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn-off waveform. Given QT from Figure 13, the external C for worst-case turn-off in any circuit is: C = QT/V, where V is defined in Figure 3. Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MPS3646 "ON" CONDITION CHARACTERISTICS 1.0 VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA 0.8 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 10 20 30 50 1.0 VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA 0.8 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 10 20 30 50 Figure 5. Collector Saturation Region Vsat , SATURATION VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 IC/IB = 10 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 MAX VBE(sat) MIN VBE(sat) 1.0 0.5 0 - 0.5 (25C to 125C) - 1.0 - 1.5 - 2.0 qVC for VCE(sat) (25C to 125C) (- 55C to 25C) MAX VCE(sat) qVB for VBE (- 55C to 25C) 1.0 2.0 3.0 50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 200 0 40 80 120 160 IC, COLLECTOR CURRENT (mA) 200 Figure 6. Saturation Voltage Limits Figure 7. Temperature Coefficients 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS 200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25C TJ = 125C 2V Figure 8. Delay Time Figure 9. Rise Time 50 TJ = 25C TJ = 125C t f , FALL TIME (ns) IC/IB = 10 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25C TJ = 125C t s , STORAGE TIME (ns) 30 20 IC/IB = 20 10 7.0 5.0 ts ^ ts - 1/8 tf IB1 = IB2 Figure 10. Storage Time Figure 11. Fall Time 10 MAX TYP 7.0 CAPACITANCE (pF) Cibo Q, CHARGE (pC) 1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25C TJ = 125C 5.0 3.0 Cobo 2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10 20 Figure 12. Junction Capacitance Figure 13. Maximum Charge Data Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MPS3646 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646/D *MPS3646/D* |
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